发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit capable of improving a withstand voltage to a power source surge even in an IC having a relatively small circuit scale without sacrificing the acceleration of a circuit operation or a reduction in a chip area. SOLUTION: The semiconductor integrated circuit comprises a MOSFET M4 for hysteresis connected so that a power source voltage VCC-GND is always applied between a source and a well. The integrated circuit further comprises a MOSFET M5 for surge protection connected so that a supply terminal of one power source voltage VCC and a drain of the MOSFET M4 for hysteresis is always on. Thus, the MOSFET M4 can be protected against a power source surge.
申请公布号 JP2002280518(A) 申请公布日期 2002.09.27
申请号 JP20010078015 申请日期 2001.03.19
申请人 HITACHI LTD;HITACHI TOBU SEMICONDUCTOR LTD 发明人 AOKI AKIO
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/088;H03K19/0175;(IPC1-7):H01L27/04;H01L21/823;H03K19/017 主分类号 H01L27/04
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