发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit capable of improving a withstand voltage to a power source surge even in an IC having a relatively small circuit scale without sacrificing the acceleration of a circuit operation or a reduction in a chip area. SOLUTION: The semiconductor integrated circuit comprises a MOSFET M4 for hysteresis connected so that a power source voltage VCC-GND is always applied between a source and a well. The integrated circuit further comprises a MOSFET M5 for surge protection connected so that a supply terminal of one power source voltage VCC and a drain of the MOSFET M4 for hysteresis is always on. Thus, the MOSFET M4 can be protected against a power source surge.
|
申请公布号 |
JP2002280518(A) |
申请公布日期 |
2002.09.27 |
申请号 |
JP20010078015 |
申请日期 |
2001.03.19 |
申请人 |
HITACHI LTD;HITACHI TOBU SEMICONDUCTOR LTD |
发明人 |
AOKI AKIO |
分类号 |
H01L27/04;H01L21/822;H01L21/8234;H01L27/088;H03K19/0175;(IPC1-7):H01L27/04;H01L21/823;H03K19/017 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|