| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus, in which damages to the gas inlet nozzle and damages to a wafer are prevented. SOLUTION: The substrate treatment apparatus is provided with a reaction tube 50, which forms the treatment space of the carried-in wafer and a plurality of gas inlet nozzles 60, which are erected and installed inside the reaction tube 50 and which supply a source gas to the wafer. A nozzle-position adjusting means 10, by which the respective nozzles 60 are moved back and forth in the longitudinal direction of the reaction tube 50 independently of each other, is installed.
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