| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method of forming a silicon oxide film which can deal with higher density and finer structure of an integrated circuit. SOLUTION: When anions of oxygen are used, damages to a substrate is reduced. When a bias is applied from the rear side of the substrate, an oxidation operation hardly spreads to the planar direction as different from a thermal oxidation operation, and the oxidation operation advances in the depth direction. That is to say, the oxide film is formed with directivity, and a desired region can be oxidized suitably down to a desired depth. Consequently, a semiconductor integrated circuit or the like can be readily micromachined, and its degree of integration can be increased further. The method is especially effective in a trench part, in which the oxidation depth of the bottom part is to be made thicker than that of the side face part.
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