| 摘要 |
PROBLEM TO BE SOLVED: To provide plasma etching apparatus and etching method, capable of improving the control of plasma, etching uniformity and etching selectivity. SOLUTION: This plasma etching apparatus 101 is provided with a lower electrode 110, on which a wafer 109 is mounted and a shower head part 103 for dispersing a supplied gas, supplies gas from the shower head part 103, generates plasma by performing discharge between the lower electrode 110 and the shower head part 103 and etches the wafer 109; and the shower head part 103 is provided with a plurality of inner areas 103a, 103b and 103c, isolated from each other and gas supply means 106a, 106b and 106c for supplying mutually different gases to the respective inner regions and gas flow rate control means 107a, 107b and 107c, for independently controlling the flow rate of the gases. The etching method using the apparatus is provided.
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