| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor thin film of crystal grain having proper crystallinity. SOLUTION: A growth source region 2, a target region 3 provided away from it, an amorphous silicon path 4, which made of one bent part 4a, connects the growth source region 2 to the target region 3, and a peripheral amorphous silicon region 5 which encloses the growth source region 2, amorphous silicon path 4, and target region 3, are formed by patterning an amorphous silicon film. Nickel is added to only the surface of the growth source region 2 using a mask, which is heated in an electric furnace, so that the crystal grain generated in the growth source region 2 crystallizes into the target region 3. Then, the target region 3 and the peripheral amorphous silicon region 5 are irradiated with a laser beam, so that the crystal grain of the target region 3 is made to melt and recrystallize.
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