发明名称 SEMICONDUCTOR DEVICE FOR MICROWAVE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device for a microwave having small unevenness of characteristics of elements and capable of improving operability and productivity. SOLUTION: The semiconductor device for the microwave comprises an electric elements such as bipolar transistors 17 or the like in a package 12. The semiconductor device further comprises a first semiconductor energizing substrate 18 having an upper electrode formed on the upper surface of the semiconductor substrate and a lower electrode formed on the lower surface, and a second semiconductor energizing substrate 19 having a lower electrode connected to a land pattern 16 or a ground pattern 15 in the package 12.
申请公布号 JP2002280482(A) 申请公布日期 2002.09.27
申请号 JP20010078619 申请日期 2001.03.19
申请人 TOSHIBA CORP 发明人 KOTAKI YOSHIKATSU
分类号 H01L23/12;H01L23/02;(IPC1-7):H01L23/12 主分类号 H01L23/12
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