| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive type photosensitive resin composition having such a degree of sensitivity that it can be satisfied as a positive type photoresist composition used in ultra-microfabrication in the production of a semiconductor device, excellent in image contrast and section shape, particularly having good focal depth-width characteristics and good heat resistance, excellent also in storage stability and having very high practicality. SOLUTION: The positive type photosensitive resin composition is obtained by blending an alkali-soluble novolak resin with at least one of compounds of formula (1) or formula (2) (where at least one of D<1> -D<3> is naphthoquinone-1,2- diazidosulfonyl, the remainders are H and (1), (m) and (n) are each 0 or an integer of 1-3) as a photosensitive component. |
