| 摘要 |
PROBLEM TO BE SOLVED: To provide a soluble surface treatment method for LaSrAlO4 single crystal substrate by which a superconductive oxide thin film having a super conductivity transition temperature can be formed with a high yield, by removing a deteriorated layer left on the surface of a substrate by a soluble surface treatment. SOLUTION: The deteriorated layer left on the surface of the LaSrAlO4 single crystal substrate is etched in a solution containing e.g. a hydrochloric acid or a nitric acid to remove it. In this method, the surface of the LaSrAlO4 single crystal substrate is immersed in a solution containing an acid, and the vicinity of the surface of the substrate is dissolved by this operation, thereby removing the deteriorated layer left on the surface. By executing this solution surface treatment of the substrate, a high-temperature superconductor can be epitaxially grown on the single crystal substrate excellently, and thus the superconductive oxide thin film having a high superconductivity transition temperature can be formed.
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