| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a CSP of a wafer level package type having a small warpage after resin- sealing, excellent reliability and heat resistance with a good productivity can be easily manufactured. SOLUTION: The method for manufacturing the semiconductor device comprises a step of heating/press bonding a polyamic acid film of a semi-cured state having a tensile elastic modulus after imide deriving of 2,000 MPa or less, a linear expansion coefficient of 200 ppm/ deg.C or less and a glass transition temperature of 200 deg.C or higher on the surface of a wafer-like semiconductor element having a passivation film and metal posts for electrodes of the element, a step of exposing the surfaces of the posts by heat treating the element formed with the polyamic acid film and polishing the surface of a polyimide sealing material as needed after the imide deriving is completed, a step of forming a metal bump on the exposed surface of the post, and a step of rear surface polishing and dicing the wafer in which the metal bump is formed.
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