| 摘要 |
PROBLEM TO BE SOLVED: To precisely extract an ion implantation distribution, in a short period, in a semiconductor element structure where thickness of a surface oxide film changes. SOLUTION: There are provided a process S102 for extracting a thickness value of a reduced oxide film at a position, where the thickness value of reduced oxide film of a semiconductor element surface is least in the prescribed ion incident direction, a process S103 for calculating a distribution parameter value of Pearson function for the kind of ion, implantation energy, implantation surface density, implantation angle, and extracted film thickness value, processes S104-S105 to derivate the Pearson function using the calculated distribution parameter value, and processes S106-S109 which solve the physical equation using the derivated Pearson function and calculate an information related to ion implantation distribution in the semiconductor element.
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