| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the influence of parasitic capacitance on passive elements of a wiring substrate layer and to sophisticate and reduce the area and the size of the device. SOLUTION: The high-frequency module device is provided with a base substrate 2 which has a third pattern wiring layer 17 on its major surface, dielectric insulating layers 30, 31 and 32 which are formed by applying a dielectric insulating material to the base substrate 2 by a spin coat method, and high-frequency device layers 4 which have passive elements such as an inductor 25 formed on the dielectric insulating layers 30, 31 and 32 by thin film deposition. A thick part 36 where the thickness is partly larger is formed in the second dielectric insulating layer 31 by placing a flow inhibiting part 33 which inhibits the flow of the dielectric insulating material on the first dielectric layer 30. An inductor 25 is formed on the thick part 36 of the second dielectric insulating layer 31.</p> |
