| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device having a temperature sensor whose malfunction can be suppressed even to such disturbances and noises as electromagnetic interference waves. SOLUTION: The power semiconductor device 10 comprises a power semiconductor element 40 formed on a substrate 11 and a temperature sensor 20 including at least one temperature sensing diode 30 formed on the substrate. In the power semiconductor device, there are made substantially equal to each other a capacitance formed between one region 16 of regions 16, 18 having different conduction types from each other which constitute the diode and a base region 38 of the semiconductor element, and a capacitance formed between the other region 18 of the regions 16, 18 having different conduction types from each other and the base region 38 of the semiconductor element.
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