| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a satisfactory device the leakage current of which is low, using an epitaxial film on a (11-20) or (1-100) plane of a silicon carbide(SiC) substrate. SOLUTION: The field effect transistor is formed on a p-type silicon carbide substrate 11 or a p-type silicon carbide substrate, having a p-type silicon carbide buffer layer 12.
|
