| 发明名称 |
READING CIRCUIT FOR FLASH STORAGE WITH MULTILEVEL CELLS |
| 摘要 |
determination of state of semiconductor storage cell. SUBSTANCE: one option of specified circuit has two comparators and selector circuit. Another option includes comparator and decoding circuit. Formula of invention describes operation of both options of reading circuit. EFFECT: potential for reading storage cells possessing more than two possible states. 4 cl, 9 dwg, 1 tbl
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| 申请公布号 |
RU2190260(C2) |
申请公布日期 |
2002.09.27 |
| 申请号 |
RU19970100133 |
申请日期 |
1995.05.18 |
| 申请人 |
INTEL KORPOREJSHN |
发明人 |
BAUER MARK E.;TALREDZHA SANDZHAJ;FATSIO AL'BERT;ATVUD GREGORI;DZHAVANIFARD DZHONNI;FRARI KEVIN V. |
| 分类号 |
G11C13/00;G11C11/56;(IPC1-7):G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
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