| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which the exposing condition of a photoresist can be set easily for each semiconductor device. SOLUTION: In this method, various manufacturing steps are carried out before the wiring step, after bipolar, MOS, and LDMOS integrated circuits have been formed on a substrate. In the wiring step, the aperture ratios X, Y, and Z of first to third photomasks respectively used at the time of forming a LOCOS oxide film, polysilicon film, and contact hole in the preceding steps of the wiring step are written on an information recording photomask used in the wiring step and a focus correcting value F is set, based on the aperture ratios X, Y, and Z at exposing of a resist formed on an Al film which becomes a wiring. Then a resist pattern is formed by exposing the resist, and the wiring is formed by etching the Al film by using the resist pattern as a mask.</p> |
