发明名称 |
MANUFACTURING METHOD OF ELECTRON EMISSION ELEMENT, ELECTRON EMISSION ELEMENT, CHARGING DEVICE AND IMAGE FORMING DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To reduce manufacturing cost of an electron emission element. SOLUTION: A semiconductor layer 13, an insulating layer 11 and a thin film electrode 12 are laminated sequentially, and an electron emission element A emitting electron is manufactured by applying voltage. Manufacture of the semiconductor layer 13 and the insulating layer 11 is done by forming fine-grain silicon on a substrate with fine-grain spray method. With this, the semiconductor layer 13 is formed as a silicon film, and the insulating layer 11 is formed as an oxidized or nitrided film of silicon.</p> |
申请公布号 |
JP2002279892(A) |
申请公布日期 |
2002.09.27 |
申请号 |
JP20010080179 |
申请日期 |
2001.03.21 |
申请人 |
RICOH CO LTD |
发明人 |
KONDO HIROSHI;SUGAWARA TOMOAKI;SHOJI HIROYOSHI |
分类号 |
G03G15/02;H01J1/312;H01J9/02;(IPC1-7):H01J9/02 |
主分类号 |
G03G15/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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