发明名称 MANUFACTURING METHOD OF ELECTRON EMISSION ELEMENT, ELECTRON EMISSION ELEMENT, CHARGING DEVICE AND IMAGE FORMING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To reduce manufacturing cost of an electron emission element. SOLUTION: A semiconductor layer 13, an insulating layer 11 and a thin film electrode 12 are laminated sequentially, and an electron emission element A emitting electron is manufactured by applying voltage. Manufacture of the semiconductor layer 13 and the insulating layer 11 is done by forming fine-grain silicon on a substrate with fine-grain spray method. With this, the semiconductor layer 13 is formed as a silicon film, and the insulating layer 11 is formed as an oxidized or nitrided film of silicon.</p>
申请公布号 JP2002279892(A) 申请公布日期 2002.09.27
申请号 JP20010080179 申请日期 2001.03.21
申请人 RICOH CO LTD 发明人 KONDO HIROSHI;SUGAWARA TOMOAKI;SHOJI HIROYOSHI
分类号 G03G15/02;H01J1/312;H01J9/02;(IPC1-7):H01J9/02 主分类号 G03G15/02
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