| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of improving the embedding property of a metal film to a connection hole having a high aspect ratio. SOLUTION: The method is provided with a process for forming a barrier metal film 5 at an insulation film 3 having the connection hole 4 on a semiconductor substrate or a lower layer wiring, a process for creating first metal films 6 on the film 5, a process for etch-removing a first metal film 6b at the inner wall part of the hole 4 except the first metal film 6c at the bottom of the hole 4, and a process for creating a second metal film 7 and embedding the film 7 into the hole 4 after the etching process. Thus, in embedding of the film 7 into the hole 4, the thickness of the film 7 at the bottom of the hole 4 is increased to improve coverage and to reduce a void 8.
|
