FERROELECTRIC SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem of a prior art ferroelectric memory that, when a voltage for writing data is applied between a gate metal and a semiconductor, the voltage is not applied effectively to a ferroelectric layer because the voltage is also applied to a buffer layer and thereby the amount of polarization in the ferroelectric layer is small, a polarization state is instable and a data holding time is short. SOLUTION: A capacitor (MFM capacitor) sharing the ferroelectric layer with an MFBS structure and having metals sandwiching bath sides of the ferroelectric layer is placed contiguously to the MFBS structure and a stabilized polarization state formed in the MFM capacitor is utilized for solving the problem.