FERROELECTRIC MEMORY MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a ferroelectric memory material having a basic composition of SrBi2 Ta2 O9 (SBT) and exhibiting a high polarization moment within a working temperature range. SOLUTION: In a ferroelectric comprising a Bi layer compound having a chemical composition of (Sr1-y Bay )1-x Bi2+x (Ta1-z Nbz )2 O9 , x, y and z satisfy the following relations of 0.0<; x<=0.3 and 0.0<; y<=0.3 and 0.3<=z<=1.0.