| 摘要 |
PROBLEM TO BE SOLVED: To form an element having sufficient element characteristic without using precise working technique for forming an element separation area in a semiconductor device having a trench element separation area. SOLUTION: After forming element areas 1aa to 1ac by an element forming process, the element separation areas 1ba and 1bb are etched by an element separation area etching process, and an insulation film 20 is embedded to their etching parts 16b and 16c by a trench element separation area embedding process.
|
