| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a device and a method which have a higher film formation speed for an i layer and can secure a uniform film thickness for a p layer and an n layer and therefore can form a polysilicon photoelectric transfer unit having good characteristics with high productivity and high yield. SOLUTION: The method for forming a polysilicon photoelectric transfer layer including the p layer, i layer, and n layer comprises a process wherein a reactive gas is introduced into a p-layer film formation chamber (21) and then the high-frequency power of a 13.56 MHz frequency is supplied to cause discharging to occurs, and then a polysilicon film is formed at a film formation speed of 2μm/h or lower to form the p layer, a process wherein the reactive gas is introduced into i-layer film formation chambers (22-25) and then the high-frequency power of a 27.12 MHz frequency is supplied to cause discharging to occur, and then the polysilicon film is formed at a film formation speed of 2.5μm/h or higher to form the i layer, and a process wherein the reactive gas is introduced into an n layer film formation chamber (26) and then the high-frequency power of a 13.56 MHz frequency is supplied to cause discharging to occur, and then the polysilicon film is formed at the film formation speed of 2μm/h or lower to form the n layer.</p> |
