发明名称 POLYCRYSTALLINE SOLAR CELL AND POLYCRYSTALLINE FILM
摘要 <p>PROBLEM TO BE SOLVED: To provide a polycrystalline silicon thin film solar cell good in characteristics and a solar cell which suppresses the recombination of charges in a grain boundary and has high conversion efficiency. SOLUTION: The polycrystalline solar cell having an active layer 12 formed on a polycrystalline silicon substrate 11 is characterized by that the active layer is composed of a polycrystal and a film thickness in a grain boundary 16 of the polycrystal forming the active layer 12 ranges from 0.20 to 0.85 in film thickness at a polycrystal grain center. The active layer is grown in a liquid phase and the polycrystalline silicon substrate 11 is also formed on a metal silicon wafer.</p>
申请公布号 JP2002280582(A) 申请公布日期 2002.09.27
申请号 JP20010076601 申请日期 2001.03.16
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;NAKAGAWA KATSUMI;NISHIDA AKIYUKI;SATO HIROSHI;TAKAI YASUYOSHI
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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