发明名称 |
POLYCRYSTALLINE SOLAR CELL AND POLYCRYSTALLINE FILM |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polycrystalline silicon thin film solar cell good in characteristics and a solar cell which suppresses the recombination of charges in a grain boundary and has high conversion efficiency. SOLUTION: The polycrystalline solar cell having an active layer 12 formed on a polycrystalline silicon substrate 11 is characterized by that the active layer is composed of a polycrystal and a film thickness in a grain boundary 16 of the polycrystal forming the active layer 12 ranges from 0.20 to 0.85 in film thickness at a polycrystal grain center. The active layer is grown in a liquid phase and the polycrystalline silicon substrate 11 is also formed on a metal silicon wafer.</p> |
申请公布号 |
JP2002280582(A) |
申请公布日期 |
2002.09.27 |
申请号 |
JP20010076601 |
申请日期 |
2001.03.16 |
申请人 |
CANON INC |
发明人 |
ISHIHARA SHUNICHI;NAKAGAWA KATSUMI;NISHIDA AKIYUKI;SATO HIROSHI;TAKAI YASUYOSHI |
分类号 |
H01L31/04;(IPC1-7):H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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