EEPROM ARRAY AND ITS OPERATING METHOD

摘要

PROBLEM TO BE SOLVED: To improve a problem of disturbance in an array of an electrically erasable and programmable read only memory(EEPROM). SOLUTION: An operating method for an electrically erasable and programmable read only memory(EEPROM) array comprises a step in which an array comprising a plurality of memory cells connected respectively to one word line and two bit lines is provided, a step selecting one memory cell, and a step in which a bit of a selected memory cell is erased applying suppression word line voltage to a gate of a memory cell being not yet selected. An EEPROM is mounted, the array comprises a plurality of a NROM memory cell, each memory cell is connected to one word line and two word lines, each NROM cell is erasable individually and programmable individually without disturbing a cell being not yet selected.