| 摘要 |
PROBLEM TO BE SOLVED: To make a patterning on a transparent conductive film laminate with a small slippage of side end position. SOLUTION: A patterning is made on a transparent conductive film laminate, which is made by laminating a transparent film layer of high refraction factor (a) 20 and a transparent metal film layer (b) 30 on a transparent substrate (A) 10, by a dry etching method by sputtering with an inert gas. The inert gas used for the etching method contains as a principal content at least one selected from neon, argon, krypton and xenon. The transparent conductive film laminate is made an etching by this method.
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