| 摘要 |
PROBLEM TO BE SOLVED: To minimize the number of the contacting times of a chemical and element separation in wet etching. SOLUTION: The element separation 5 is formed at a silicon substrate 1, a resist 7 is formed in an area on the side of one element separation end 5b of the separation 5, and a silicon oxide film 3 in an area on the side of the other element separation end 5a is removed by wet etching to produce a semiconductor device 1. Thus, the one end 5b is not contact with the chemical and only the other end 5a is contact with the chemical, so the whole separation 5 is not contact with the chemical. By wet etching and removing the film 3 on the area on the side of the end 5b in a similar order, the number of the contacting times of the separation 5 and the chemical is minimized until a process for forming a gate electrode. Consequently, a recess is not made by corrosion of the ends 5a and 5b and the occurrence of the formation of a parasitic MOS transistor and a reverse narrow channel effect is prevented.
|
