| 摘要 |
microelectronics and electronic engineering; film resistor manufacture. SUBSTANCE: method involves exposure of resistive film to electric-arc discharge, trimming process being conducted in two steps; during first step discharge electrode is held motionless and trimming is effected until value of resistor being trimmed is brought to 0,99Rr, where Rr is desired rated value of resistor; during second step electrode is horizontally shifted through distance equal to destruction zone radius found from mathematical expression. EFFECT: enhanced precision of resistor trimming compared with prior art. 4 dwg
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