发明名称 SOLID-STATE IMAGE SENSOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a high definition solid-state image sensor in which flare is prevented by lowering reflectivity without the sacrifice of sensitivity, and a method for manufacturing a highly reliable solid-state image sensor with high yield without deteriorating an antireflection film and preventing charging while decreasing the use frequency of an evaporation unit and for mounting the image sensor while preventing cracking. SOLUTION: The solid-state image sensor comprises an underlying resin layer 13, a resin lens 14, a mixture oxide film 15 and a transparent resin film 16 formed on a photoelectric conversion element 17 wherein the mixture oxide film is composed of a mixture of indium oxide and a recess 20 is formed in the underlying resin layer between resin lenses. After the resin lenses are formed on the underlying resin layer, the recess is formed in the underlying resin layer between the resin lenses, and then the mixture oxide film and the transparent resin film are formed before a pad part 31 is exposed.
申请公布号 JP2002280534(A) 申请公布日期 2002.09.27
申请号 JP20010075630 申请日期 2001.03.16
申请人 TOPPAN PRINTING CO LTD 发明人 FUKUYOSHI KENZO;ISHIMATSU TADASHI;KITAMURA TOMOHITO
分类号 G02B5/20;G02B1/11;G02B3/00;H01L27/14;H01L31/0232 主分类号 G02B5/20
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