| 摘要 |
PROBLEM TO BE SOLVED: To provide an LED element having a structure having high light emitting intensity and has surface defects. SOLUTION: A semiconductor light emitting element comprises a GaAs substrate, a lower clad layer, an active layer and an upper clad layer formed of an AlGaInP material lattice-matched to the GaAs formed on the substrate. The emitting element further comprises AlGaInP intermediate band gap layer and two or more current diffusion layers not lattice-matched to the GaAs. In this case, the carrier concentration of the diffusion layer nearest to the active layer is set to 1 to 3×10<18> cm<-3> , and the carrier concentration of the diffused layer farthest from the active layer is set to 1 to 2×10<18> cm<-3> . |
