| 摘要 |
PROBLEM TO BE SOLVED: To provide an n-type GaP single crystal substrate capable of being suitably used to manufacture a green light emitting diode capable of driving on a low forward voltage with high luminance and to provide a method for manufacturing the same. SOLUTION: In the n-type GaP single crystal substrate in which Si and T are simultaneously doped as n-type dopants, the sum of an Si concentration and a Te concentration in the n-type GaP single crystal substrate is set to 2×10<17> to 2×10<18> cm<-3> , the Si concentration is set to 2×10<16> to 8×10<17> cm<-3> , and the Te concentration is set to 1×10<17> to 2×10<17> cm<-3> . |
