ULTRAVIOLET LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an ultraviolet light emitting element having a higher output and a long lifetime by optimizing the structure of the element by adopting InGaN as the material of a light emitting layer. SOLUTION: The ultraviolet light emitting element comprises a GaN crystal layer 2 vapor growth directly or via a GaN semiconductor low-temperature buffer layer 1 on a rugged part 1S formed on the surface of a crystal substrate S. In this element, the GaN crystal layer is substantially filled in the recess of the rugged part and grown until the rugged part is embedded and flattened. Further, the InGaN crystal layer of the composition capable of emitting the ultraviolet ray grown as the ultraviolet emitting layer to the ultraviolet light emitting element.