| 摘要 |
PROBLEM TO BE SOLVED: To increase the composition ratio of Cr for improving wettability on a seed layer surface to properly cope with future tendency toward high recording density although the composition ratio of Cr is set from 35 at.% or less to 40 at.% or less in the conventional seed layer. SOLUTION: The composition ratio of Cr in the seed layer 22 is set to 35 at.% or more and 60 at.% or less, film thickness is set to 10Åor more and 200Åor less, and appropriate sputter conditions are achieved, thus composing crystal structure merely by face centered cubic structure, and improving the wettability on the seed layer surface while the face centered cubic structure is being maintained, and increasing a resistance change rate (ΔR/R) and the like as compared with the conventional one.
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