发明名称 |
Method to form thermally stable nickel germanosilicide on SiGe |
摘要 |
A thermally stable nickel germanosilicide on SiGe integrated circuit device, and a method of making the same, is disclosed. During fabrication of the device iridium or cobalt is added at the Ni/SiGe interface to decrease the sheet resistance of the device. The device comprising nickel silicide with iridium on SiGe shows thermal stability at temperatures up to 800° C. The device comprising nickel silicide with cobalt on SiGe shows a decrease in the sheet resistance with temperature, i.e., the resistance remains low when annealing temperatures extend up to and beyond 800° C.
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申请公布号 |
US2002134982(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
US20010834488 |
申请日期 |
2001.04.12 |
申请人 |
MAA JER-SHEN;TWEET DOUGLAS JAMES;HSU SHENG TENG |
发明人 |
MAA JER-SHEN;TWEET DOUGLAS JAMES;HSU SHENG TENG |
分类号 |
H01L21/28;H01L21/285;H01L29/45;(IPC1-7):H01L29/76;H01L31/036;H01L31/112 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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