发明名称 |
EPITAXIALLY GROWN ACOUSTO-OPTIC STRUCTURE AND DEVICE |
摘要 |
<p>High quality epitaxial layers of monocrystalline piezoelectric materials (106) and acousto-optic materials (108) can be grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide (110). The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Acousto-Optic device (1018) may be formed using the piezoelectric materials (106) and the acousto-optic materials (108) formed using other epitaxially grown monocrystalline layers.</p> |
申请公布号 |
WO02075437(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
WO2001US48391 |
申请日期 |
2001.12.10 |
申请人 |
MOTOROLA, INC. |
发明人 |
EISENBEISER, KURT, W.;FINDER, JEFFREY, M. |
分类号 |
G02F1/11;G02F1/33;H01L27/20;(IPC1-7):G02F1/11 |
主分类号 |
G02F1/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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