| 摘要 |
<p>An uncooled, infrared detector which includes a sensor (12) having an amorphous surface layer (14) containing organic carbon and a high dopant concentration which possesses an improved temperature coefficient of resistivity, as well as improved responsivity, and which may be patterned to form a focal plane array by means of common microlithographic techniques. Additionally an 'ion beam mixing' process for preparing the present infrared sensor.</p> |
