METHOD OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A side-wall insulating film (11) composed of a silicon oxide film is formed on the side wall of a gate electrode (7) (word line WL) to reduce pair word line capacity components as a main component of a bit line capacity. When a silicon oxide film (31) at the upper portion of a contact hole (12) is dry-etched to form a bit line connecting hole in the upper part of the gate electrode's (7) (word line WL) space, a nitride silicon film (19) working as an etching stopper is provided on the lower layer of the silicon oxide film (31) so as to reduce that portion of the bottom of the hole which sinks below the top surface of a cap insulating film (9).