发明名称 |
Method of fabrication thin wafer IGBT |
摘要 |
Disclosed is a method for fabricating thin wafer insulated gate bipolar transistors (IGBTs), in which a portion on the back side of the device region is removed to form a hollow region with a depth that results in a device region thickness equivalent to the thickness of a thin wafer while the rest of the wafer remains its standard thickness. In other words, the method according to the present invention is suitable for the currently used wafer transfer stations under thin wafer conditions. The non-punch-through type insulated gate bipolar transistor (NPT-IGBT) fabricated with this method gets rid of an epi-layer and the "lifetime killer" process. The punch-through type insulated gate bipolar transistor (PT-IGBT) fabricated with this method has higher switching efficiency due to reduced injection efficiency of the p+-type minority carriers. To sum up, the method of the present invention can tremendously increase the processing yield by solving the problems related to wafer transfer and thus effectively reduce the fabrication cost.
|
申请公布号 |
US2002137264(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
US20010815786 |
申请日期 |
2001.03.23 |
申请人 |
KAO MING-JER;HUNG CHIEN-CHUNG;WEI JENG-HUA;HO JIH-SHIN |
发明人 |
KAO MING-JER;HUNG CHIEN-CHUNG;WEI JENG-HUA;HO JIH-SHIN |
分类号 |
H01L21/331;H01L29/06;H01L29/739;(IPC1-7):H01L21/332;H01L21/822;H01L27/102;H01L29/74;H01L31/11;H01L29/70;H01L27/082;H01L31/111 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|