发明名称 |
Method for forming cells array of mask read only memory |
摘要 |
A method for forming cells array of mask read only memory, at least includes: form numerous gate structures on substrate; form numerous doped regions in uncovered part of substrate; form first conductor layer on uncovered part of substrate with a thickness essentially equal to thickness of gate structures; form first dielectric layer on first conductor layer; form second conductor layer on both gate structures and first dielectric layer; perform a pattern transform process for transferring both second conductor layer and gate structures into conductor lines as word lines; form second dielectric layer on sidewalls of conductor lines to form spacer; form code photoresist on second conductor layer; and perform ions implantation process for implant numerous ions into partial substrate which is not covered by code photoresist.
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申请公布号 |
US2002136989(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
US20010811392 |
申请日期 |
2001.03.20 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LIN CHUN-JUNG |
分类号 |
G03F7/00;H01L21/8246;H01L27/112;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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