Method for fabricating an integrated ferroelectric semiconductor memory and integrated ferroelectric semiconductor memory

摘要

The integrated ferroelectric semiconductor memory is fabricated according to the stack cell principle. A ferroelectric capacitor module is formed on an intermediate oxide above a selection transistor located in or on a semiconductor wafer. The capacitor module is brought into conductive contact by its bottom capacitor electrode with an electrode of the selection transistor by means of an electrically conductive plug leading through the intermediate oxide. A layer system of a conductive oxygen diffusion barrier and a conductive adhesion layer is deposited directly below the bottom capacitor electrode, and the adhesion layer and the overlying oxygen diffusion barrier are deposited directly into the contact hole and form the plug at least in the region lying directly below the bottom capacitor electrode.