发明名称 |
Post etch cleaning composition for dual damascene system |
摘要 |
A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure.
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申请公布号 |
US2002134963(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
US20010007134 |
申请日期 |
2001.12.04 |
申请人 |
EKC TECHNOLOGY, INC. |
发明人 |
PEYNE CATHERINE M.;MALONEY DAVID J.;LEE SHIHYING;LEE WAI MUN;ARKLESS LESLIE W. |
分类号 |
C22B7/00;C09K13/00;C11D7/32;C11D7/34;C23C18/14;G03F7/42;H01L21/02;H01L21/28;H01L21/306;H01L21/311;H01L21/3213;H01L21/768;H05K3/10;(IPC1-7):H01B13/00 |
主分类号 |
C22B7/00 |
代理机构 |
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地址 |
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