摘要 |
In order to fabricate a dynamic memory cell configuration with a long retention time, a hydrogen heat treatment of the wafer is carried out after the production of the interconnect system. The hydrogen heat treatment is performed in a PECVD reactor into which hydrogen is introduced and excited in the plasma. The heat treatment becomes more effective as a result and can be combined with deposition processes, in particular of passivation layers, carried out in PECVD installations.
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