发明名称 Photomask blank, photomask and method of manufacture
摘要 In a photomask blank comprising a light-shielding film and an antireflective film on a transparent substrate, the light-shielding film and the antireflective film are formed of a chromium base material containing oxygen, nitrogen and carbon such that the content of carbon decreases stepwise or continuously from a surface side toward the substrate. The photomask blank can be etched at a controlled rate to produce perpendicular walls. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask have uniform film properties and contribute to the microfabrication of semiconductor ICs of greater density and finer feature size.
申请公布号 US2002136966(A1) 申请公布日期 2002.09.26
申请号 US20020073415 申请日期 2002.02.13
申请人 SHINAGAWA TSUTOMU;MARUYAMA TAMOTSU;KANEKO HIDEO;KOJIMA MIKIO;INAZUKI YUKIO;OKAZAKI SATOSHI 发明人 SHINAGAWA TSUTOMU;MARUYAMA TAMOTSU;KANEKO HIDEO;KOJIMA MIKIO;INAZUKI YUKIO;OKAZAKI SATOSHI
分类号 C23C14/06;G03F1/08;G03F1/14;G03F1/46;G03F1/50;G03F1/54;G03F7/20;H01L21/027;(IPC1-7):G03F9/00;C23C14/00;C23C14/32;G03C5/00;B32B17/06;B32B15/00 主分类号 C23C14/06
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