发明名称 |
Method for producing semiconductor wafer and semiconductor wafer |
摘要 |
The present invention provides a process for manufacturing a semiconductor wafer capable of effectively reducing unevenness having a wavelength of 0.5 mm or more which remains on a surface of the semiconductor wafer after a first polishing step and improving flatness thereof; and a semiconductor wafer manufactured by the manufacturing process. The manufacturing process comprises: plural polishing steps including a first polishing step and a final polishing step; and a corrective polishing step performed after the first polishing step using a polishing cloth harder than that used in the first polishing step.
|
申请公布号 |
US2002137313(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
US20010926731 |
申请日期 |
2001.12.10 |
申请人 |
UENO JUNICHI;MASUMURA HISASHI;HASHIMOTO HIROMASA |
发明人 |
UENO JUNICHI;MASUMURA HISASHI;HASHIMOTO HIROMASA |
分类号 |
B24B37/00;B24B37/04;B24B37/20;B24B37/24;B24D3/28;H01L21/302;H01L21/306;(IPC1-7):C30B1/00 |
主分类号 |
B24B37/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|