| 发明名称 |
Method for the formation of copper wiring films |
| 摘要 |
A method for the formation of copper wiring films includes the steps of forming a first copper film by means of a CVD method on an insulating diffusion barrier film, which insulating diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.
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| 申请公布号 |
US2002134686(A1) |
申请公布日期 |
2002.09.26 |
| 申请号 |
US20010987940 |
申请日期 |
2001.11.16 |
| 申请人 |
KOBAYASHI AKIKO;SEKIGUCHI ATSUSHI;KOIDE TOMOAKI;ZHANG MINJUAN;SUNAYAMA HIDEKI;XIAO SHIQIN;SUZUKI KAORU |
发明人 |
KOBAYASHI AKIKO;SEKIGUCHI ATSUSHI;KOIDE TOMOAKI;ZHANG MINJUAN;SUNAYAMA HIDEKI;XIAO SHIQIN;SUZUKI KAORU |
| 分类号 |
H01L21/3205;C23C26/00;C23C28/02;C25D7/12;H01L23/52;(IPC1-7):C25D7/12;C25D11/32;C25D5/50 |
主分类号 |
H01L21/3205 |
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