发明名称 |
METHOD AND APPARATUS FOR ELECTROCHEMICAL ETCHING, AND ELECTROCHEMICALLY-ETCHED PRODUCT |
摘要 |
An electrochemical etching device (10) comprises an etching bath (12) holding an n-type silicon substrate with one side in contact with electrolyte, an electrode (28) arranged in electrolyte (14) including hydrogen fluoride acid, a power supply (30) having its positive electrode connected to the silicon substrate and its negative electrode connected to the electrode, and a light source (56) for illuminating the side of the silicon substrate opposite to that being etched. The electrolyte comprises hydrogen fluoride and has a water content in a molar ratio of 0.9. The conductivity of the electrolyte is greater than 29 mS/cm.
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申请公布号 |
WO02075800(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
WO2001JP02164 |
申请日期 |
2001.03.19 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA;IZUO, SHINICHI;OHJI, HIROSHI;TSUTSUMI, KAZUHIKO;FRENCH, PATRICK JAMES |
发明人 |
IZUO, SHINICHI;OHJI, HIROSHI;TSUTSUMI, KAZUHIKO;FRENCH, PATRICK JAMES |
分类号 |
H01L21/3063;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3063 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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