| 摘要 |
A structure of memory device with thin film transistor is proposed. The structure of the memory device includes a substrate. The substrate has shallow trench isolation structures, a thin film transistor, a memory cell transistor, a memory peripheral transistor, and logic circuit transistor. The shallow trench isolation structures are located in the memory cell region, the logic circuit region, and also on the memory peripheral region to isolate the memory peripheral region from the memory cell region and the logic circuit region. The thin film transistor with a thin film substrate is located above the shallow trench isolation structure at the logic circuit region. A method for fabricating the memory device with thin film transistor is also proposed, where a thin film conductive layer is formed over the substrate at the logic circuit region to serve as the thin film transistor substrate.
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