| 摘要 |
A semiconductor device that can short-circuit with a low impedance a gate-to-source capacitance of an FET as a main switch device. The aforementioned semiconductor device includes a first FET, a second FET, and a package. The first FET and the second FET are placed in the package. The first FET composes a main switch device. The second FET has its drain and source connected to the gate and the source of the first FET. The package includes external terminals for the first and second FETs on its outer surface.
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