| 摘要 |
<p>A method and an apparatus for inline inspecting the thickness of a film deposited on a wafer under fabrication, pattern size, pattern registration accuracy and electrical connection state of a hole during the fabrication of a semiconductor device, an image sensor, or a display device. 'Sample observation by TEM/STEM'is combined with 'sample preparation by FIB apparatus'. The FIB apparatus selects a plurality of designated portions on a wafer as objects according to a sample preparation recipe (37) registered previously, positions a sample cut part automatically, cuts a sample automatically and mounts it automatically on a sample holder for observation used in a TEM or STEM, and prepares a recipe (88) for observing the sample by means of a TEM or STEM. The TEM or STEM automatically aligns the observation area of a plurality of samples mounted on the sample holder for observation according to the observation recipe prepared by the FIM apparatus and inputted to the TEM or STEM and acquires observation data by capturing predetermined sample image.</p> |
