| 发明名称 |
SELECTIVELY ETCHING SILICON USING FLUORINE WITHOUT PLASMA |
| 摘要 |
<heading lvl="0">Abstract of Disclosure</heading> A process for selectively etching silicon from a workpiece without etching silicon oxide or silicon nitride. The principal etchant gas is molecular fluorine gas (F2) that is not excited to a plasma state.
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| 申请公布号 |
US2002134755(A1) |
申请公布日期 |
2002.09.26 |
| 申请号 |
US20000535420 |
申请日期 |
2000.03.27 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
GOTO HARUHIRO HARRY;HARSHBARGER WILLIAM R;LAW KAM S |
| 分类号 |
H01L21/00;H01L21/302;H01L21/311;H01L21/3213;H01L21/461;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/00 |
| 代理机构 |
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| 主权项 |
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