发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME
摘要 A semiconductor device is proposed, in which a chip is placed in an opening penetratingly formed in a substrate in a manner as not to come into contact with the substrate, and an encapsulant formed on the substrate fills up the opening for encapsulating the chip. This arrangement of the chip accommodated in the substrate therefore reduces the overall height of the semiconductor device. Moreover, a plurality of conductive elements disposed on the substrate are also encapsulated by the encapsulant in a manner that, bottom sides of the conductive elements are exposed to outside of the encapsulant, and coplanarly positioned with a bottom side of the encapsulant. This therefore provides good planarity for a bottom side of the semiconductor device, allowing the semiconductor device to be well electrically connected to external devices. A method for fabricating the foregoing semiconductor device is also proposed.
申请公布号 US2002135080(A1) 申请公布日期 2002.09.26
申请号 US20010974871 申请日期 2001.10.12
申请人 BAI JIN-CHUAN 发明人 BAI JIN-CHUAN
分类号 H01L21/56;H01L21/68;H01L23/13;H01L23/31;(IPC1-7):H01L23/28 主分类号 H01L21/56
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