| 摘要 |
PURPOSE: To provide a highly reliable high yield semiconductor device and its fabricating method. CONSTITUTION: The semiconductor device comprises a first gate electrode 19 formed on a semiconductor substrate 10, a first diffusion layer 20 formed in the semiconductor substrate beneath one side face of the first gate electrode, a second diffusion layer 18 formed in the semiconductor substrate beneath the other side face of the first gate electrode, a second gate electrode 13 having a side face formed on the second diffusion layer, a first insulation film 25 filling the gap between the first and second gate electrodes such that it is thinner than that gap on the first diffusion layer and having a principal component other than nitrogen, a second insulation film 26 formed on the first insulation film, an interlayer insulation film 27 formed on the second insulation film and having a principal component different from that of the second insulation film, and a contact electrode 23 formed in the first insulation film, the second insulation film and an interlayer insulation film while being connected with the first insulation film. |
